not for n e w d e s i gns 4-1 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos 13 2 4 rf out rf in gnd gnd marking - r2 RF3818 cascadable broadband gaas mmic amplifier dc to 3ghz ? cellular basestation amplifiers and transceivers ? gain stage or driver amplifiers for linear and saturated amplifiers ? narrow and broadband commercial and military radio designs the RF3818 is a high-performance ingap/gaas general purpose rf and microwave gain block amplifier. this 50 ? amplifier is based on a reliable hbt mmic design, providing unsurpassed performance for many small-sig- nal applications. designed with an external bias resistor, the RF3818 provides high output power and high gain over broad frequency range. this low-cost amplifier is packaged in a thermally efficient, industry standard, ceramic micro-x package providing excellent theta jc performance. ? reliable, low-cost hbt design ? 19.0db gain, +18.2dbm p1db@1.0ghz ? high p1db of +17.9dbm@3.0ghz ? single 6v power supply operation ?50 ? i/o matched ? thermally-efficient package RF3818 cascadable broadband gaas mmic amplifier dc to 3ghz (bulk: 25 piece increment) RF3818sb 5-piece sample bag RF3818sr 100-piece reel RF3818tr7 7? reel (1,000 pieces) RF3818pcba-410 evaluation board 0 rev a2 041013 notes: 1. shaded lead is pin 1. 2. darkened areas are metallization. 0.070 sq. 45 + 1 r2 0.055 + 0.005 0.020 + 0.002 0.040 + 0.002 0.200 sq. typ package style: micro-x, 4-pin, ceramic proposed not for new designs 9
proposed 4-2 RF3818 rev a2 041013 not for n e w d e s i gns please contact rf micro devices applications engineering at (336) 678-5570 for more information.
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